Renesas Electronics Corp. UPA679TB(0)-T1-A | 搜芯易Sourcengine

Renesas Electronics Corp. UPA679TB(0)-T1-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power MOSFETs for Automotive
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
0.35 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
7 pF
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
0.2 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.6 ohm
Width
2
Length
1.25