Renesas Electronics Corp. UPA654TT-E1-A | 搜芯易Sourcengine

Renesas Electronics Corp. UPA654TT-E1-A

生命周期状态
EOL
RoHS
符合RoHS标准
说明
P-Channel Mos Field Effect Transistor For Switching
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F6
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
2.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
12 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.3 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.133 ohm
Width
2
Length
1.6