Renesas Electronics Corp. UPA502T | 搜芯易Sourcengine

Renesas Electronics Corp. UPA502T

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G5
Configuration
COMMON SOURCE, 2 ELEMENTS
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
5
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.1 A
DS Breakdown Voltage-Min
50 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
0.3 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
30 ohm