UPA2811T1L-E2-AY
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明Switching N-Channel Power MOSFET
- 类别
- ECCN5A002
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)19 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)52 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)36 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.015 ohm
- Pulsed Drain Current-Max (IDM)76 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Width3.15
- Length3
UPA2811T1L-E2-AY有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
UPA2811T1L-E2-AY