Renesas Electronics Corp. UPA2793GR-E1-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. UPA2793GR-E1-AZ

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Nch/Pch Dual Power Mosfet 40V 7A 15Mohm Power Sop8
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
40 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
4.9 mJ
Drain-source On Resistance-Max
0.023 ohm
Pulsed Drain Current-Max (IDM)
28 A
Width
4.4
Length
5.37