Renesas Electronics Corp. UPA2754GR-E2-A | 搜芯易Sourcengine

Renesas Electronics Corp. UPA2754GR-E2-A

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
2 N-Channel (Dual)
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
11 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
12.1 mJ
Drain-source On Resistance-Max
0.0186 ohm
Pulsed Drain Current-Max (IDM)
88 A
Width
4.4
Length
5.37