Renesas Electronics Corp. UPA2732UT1A-E1-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. UPA2732UT1A-E1-AZ

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Switching N-Channel Power MOSFET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
40 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
4.6 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
40 mJ
Drain-source On Resistance-Max
0.0067 ohm
Pulsed Drain Current-Max (IDM)
160 A
Width
5
Length
5.4