Renesas Electronics Corp. UPA2719GR-E2-AT | 搜芯易Sourcengine

Renesas Electronics Corp. UPA2719GR-E2-AT

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Switching N-Channel Power MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
10 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
10 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.0255 ohm
Pulsed Drain Current-Max (IDM)
100 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
4.4
Length
5.37