Renesas Electronics Corp. UPA2510TM | 搜芯易Sourcengine

Renesas Electronics Corp. UPA2510TM

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 18A I(D), 30V, 14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
18 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
32.4 mJ
Drain-source On Resistance-Max
14 ohm
Pulsed Drain Current-Max (IDM)
72 A