Renesas Electronics Corp. UPA2351BT1P-E4-A | 搜芯易Sourcengine

Renesas Electronics Corp. UPA2351BT1P-E4-A

生命周期状态
EOL
RoHS
符合RoHS标准
说明
N-Channel Mos Field Effect Transistor For Switching
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
S-PBGA-B4
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-609 Code
e6
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN BISMUTH
Terminal Position
BOTTOM
Number of Elements
2
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
SWITCHING
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.3 W
Transistor Element Material
SILICON
Width
1.62
Length
1.62