Renesas Electronics Corp. UPA1911TE | 搜芯易Sourcengine

Renesas Electronics Corp. UPA1911TE

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
2.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.12 ohm