Renesas Electronics Corp. UPA1812GR-9JG-E1-A | 搜芯易Sourcengine

Renesas Electronics Corp. UPA1812GR-9JG-E1-A

生命周期状态
EOL
RoHS
符合RoHS标准
说明
N-Channel Mos Field Effect Transistor For Switching
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e6
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON