Renesas Electronics Corp. UPA1572BH | 搜芯易Sourcengine

Renesas Electronics Corp. UPA1572BH

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T10
Configuration
2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
4
Number of Terminals
10
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
20 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
0.1 mJ
Drain-source On Resistance-Max
0.8 ohm
Pulsed Drain Current-Max (IDM)
6 A