Renesas Electronics Corp. UPA1527H-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. UPA1527H-AZ

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 2A I(D), 100V, 1ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T10
Configuration
2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
4
Number of Terminals
10
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
3.5 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
1 ohm
Pulsed Drain Current-Max (IDM)
8 A
Time@Peak Reflow Temperature-Max (s)
10