TE Connectivity UF28150J | 搜芯易Sourcengine

TE Connectivity UF28150J

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
8
Drain Current-Max (ID) (A)
16
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Feedback Cap-Max (Crss) (pF)
32
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
389