Taiwan Semiconductor TSM60NB600CHC5G | 搜芯易Sourcengine

Taiwan Semiconductor TSM60NB600CHC5G

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK Tube
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
36 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.6 ohm
Pulsed Drain Current-Max (IDM)
21 A
Time@Peak Reflow Temperature-Max (s)
10