Taiwan Semiconductor TSM60NB190CZC0G | 搜芯易Sourcengine

Taiwan Semiconductor TSM60NB190CZC0G

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
18 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
212.9 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.19 ohm
Pulsed Drain Current-Max (IDM)
54 A
Time@Peak Reflow Temperature-Max (s)
10