Taiwan Semiconductor TSM480P06CHX0G | 搜芯易Sourcengine

Taiwan Semiconductor TSM480P06CHX0G

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
40
Drain Current-Max (ID) (A)
20
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
65
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-50
Avalanche Energy Rating (Eas) (mJ)
51
Pulsed Drain Current-Max (IDM) (A)
64
Drain-source On Resistance-Max (ohm)
0.048
Time@Peak Reflow Temperature-Max (s)
10