TSM2303CXRFG
Taiwan Semiconductor
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)1.3 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.18 ohm
- Time@Peak Reflow Temperature-Max (s)30
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TSM2303CXRFG