Taiwan Semiconductor TSM05N03CWRP | 搜芯易Sourcengine

Taiwan Semiconductor TSM05N03CWRP

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Additional Feature
ULTRA-LOW RESISTANCE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.06 ohm
Pulsed Drain Current-Max (IDM)
20 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED