Texas Instruments Incorporated TPS1100DR | 搜芯易Sourcengine

Texas Instruments Incorporated TPS1100DR

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Single P-channel Enhancement-Mode MOSFET 8-SOIC
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.39.00.60

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
0.791
Drain Current-Max (ID) (A)
1.6
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
15
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Drain-source On Resistance-Max (ohm)
0.4
Time@Peak Reflow Temperature-Max (s)
30