Texas Instruments Incorporated TPIC5323LD | 搜芯易Sourcengine

Texas Instruments Incorporated TPIC5323LD

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 1A I(D), 60V, 0.65ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AC
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G16
Configuration
SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AC
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Number of Elements
3
Number of Terminals
16
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
80 ns
Feedback Cap-Max (Crss)
28 pF
DS Breakdown Voltage-Min
60 V
Turn-off Time-Max (toff)
95 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.1 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
22.5 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
1.09 W
Drain-source On Resistance-Max
0.65 ohm
Pulsed Drain Current-Max (IDM)
3 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED