Texas Instruments Incorporated TPIC3302DR | 搜芯易Sourcengine

Texas Instruments Incorporated TPIC3302DR

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 1A I(D), 60V, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-G8
Configuration
COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
DUAL
Number of Elements
3
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
40 pF
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
0.95 W
Drain-source On Resistance-Max
0.475 ohm