Texas Instruments Incorporated TPIC2601KTC | 搜芯易Sourcengine

Texas Instruments Incorporated TPIC2601KTC

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 2A I(D), 60V, 0.3ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-G15
Configuration
COMMON SOURCE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
SINGLE
Additional Feature
ESD PROTECTED
Number of Elements
6
Number of Terminals
15
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2 A
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.7 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
105 mJ
Drain-source On Resistance-Max
0.3 ohm
Pulsed Drain Current-Max (IDM)
10 A