Texas Instruments Incorporated TMS44C257-12N | 搜芯易Sourcengine

Texas Instruments Incorporated TMS44C257-12N

生命周期状态
Discontinued
说明
Static Column DRAM, 256KX4, 120ns, CMOS, PDIP20
类别
Semiconductors Memory ICs DRAMs STATIC COLUMN DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDIP-T20
Memory Width
4
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
STATIC COLUMN DRAM
Refresh Cycles
512
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
256KX4
Number of Terminals
20
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
120
Number of Words Code
256K
Memory Density (bits)
1048576
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
262144
Standby Current-Max (A)
0.003
Supply Current-Max (mA)
70
Package Equivalence Code
DIP20,.3
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0