TM4256GV9-20L
Texas Instruments Incorporated
- 生命周期状态Discontinued
- 说明DRAM Module, 256KX9, 200ns, NMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyNMOS
- Access ModePAGE
- JESD-30 CodeR-XSMA-T30
- Memory Width9
- Package CodeSIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory IC TypeDRAM MODULE
- Operating ModeASYNCHRONOUS
- Refresh Cycles256
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionSINGLE
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Memory Organization256KX9
- Number of Functions1
- Number of Terminals30
- Terminal Pitch (mm)2.54
- Access Time-Max (ns)200
- Number of Words Code256K
- Memory Density (bits)2359296
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Seated Height-Max (mm)11.43
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)262144
- Package Equivalence CodeSIP30,.2
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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TM4256GV9-20L