TM4256GV9-10L
Texas Instruments Incorporated
- 生命周期状态Discontinued
- 说明Page Mode DRAM, 256KX9, 100ns, MOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyMOS
- Memory Width9
- Organization256KX9
- Surface MountNO
- Memory Density2359296 bit
- Memory IC TypePAGE MODE DRAM
- Refresh Cycles256
- Terminal Pitch2.54 mm
- Access Time-Max100 ns
- Number of Words262144 words
- Seated Height-Max11.43 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionSINGLE
- Number of Terminals30
- Number of Words Code256K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeSIP30,.2
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)5 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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TM4256GV9-10L