Texas Instruments Incorporated TM2EP64DJN-50 | 搜芯易Sourcengine

Texas Instruments Incorporated TM2EP64DJN-50

生命周期状态
Discontinued
说明
EDO DRAM Module, 2MX64, 13ns, MOS
类别
Semiconductors Memory ICs DRAMs EDO DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
MOS
Access Mode
SINGLE BANK PAGE BURST
JESD-30 Code
R-XDMA-N168
Memory Width
64
Organization
2MX64
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
134217728 bit
Memory IC Type
EDO DRAM MODULE
Operating Mode
ASYNCHRONOUS
Refresh Cycles
2048
Terminal Pitch
1.27 mm
Access Time-Max
13 ns
Number of Ports
1
Number of Words
2097152 words
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
CAS BEFORE RAS REFRESH
Supply Current-Max
960 mA
Number of Functions
1
Number of Terminals
168
Standby Current-Max
0.008 Amp
Number of Words Code
2M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Package Equivalence Code
DIMM168
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V