Texas Instruments Incorporated TIS128 | 搜芯易Sourcengine

Texas Instruments Incorporated TIS128

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
O-PBCY-W3
Configuration
SINGLE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.25
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.03
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
45
Power Dissipation Ambient-Max (W)
0.25
Transition Frequency-Nom (fT) (MHz)
6.5
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED