TC55V8200FTI-12
Toshiba Corporation
- 生命周期状态Discontinued
- 说明Cache SRAM, 2MX8, 12ns, CMOS, PDSO54
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)10.16
- Length (mm)22.22
- JESD-30 CodeR-PDSO-G54
- Memory Width8
- Package CodeTSOP2
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory IC TypeCACHE SRAM
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Memory Organization2MX8
- Number of Functions1
- Number of Terminals54
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)12
- Number of Words Code2M
- Memory Density (bits)16777216
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)2097152
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
TC55V8200FTI-12有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
TC55V8200FTI-12