Toshiba Corporation TC558128BFT-10 | 搜芯易Sourcengine

Toshiba Corporation TC558128BFT-10

生命周期状态
Discontinued
说明
Cache SRAM, 128KX8, 10ns, CMOS, PDSO32
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A991.b.2.b
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
10.16
Length (mm)
13.34
JESD-30 Code
R-PDSO-G32
Memory Width
8
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
CACHE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
128KX8
Number of Functions
1
Number of Terminals
32
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
10
Number of Words Code
128K
Memory Density (bits)
1048576
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
5.25
Supply Voltage-Min (V)
4.75
Supply Voltage-Nom (V)
5
Number of Words (words)
131072
Standby Current-Max (A)
0.001
Standby Voltage-Min (V)
4.75
Supply Current-Max (mA)
210
Package Equivalence Code
TSOP32,.46,32
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0