Renesas Electronics Corp. TBB1001 | 搜芯易Sourcengine

Renesas Electronics Corp. TBB1001

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Power Gain-Min (Gp)
24 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.04 A
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.08 pF
DS Breakdown Voltage-Min
6 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
0.25 W
Transistor Element Material
SILICON