ROHM Semiconductor SP8M24TB | 搜芯易Sourcengine

ROHM Semiconductor SP8M24TB

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 4.5A I(D), 45V, 0.064ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e2
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Copper (Sn/Cu)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
4.5
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
45
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
18
Drain-source On Resistance-Max (ohm)
0.064
Time@Peak Reflow Temperature-Max (s)
10