Toshiba Corporation SG4000GXH26G | 搜芯易Sourcengine

Toshiba Corporation SG4000GXH26G

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Gate Turn-Off SCR, 1200A I(T)RMS, 4500V V(DRM), 16V V(RRM), 1 Element
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers GATE TURN-OFF SCR

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.30.00.80
SB Code
8541.30.00.80

JESD-30 Code
O-CEDB-N2
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
END
Additional Feature
PEAK TURN-OFF CURRENT IS 4000A
Number of Elements
1
Number of Terminals
2
Trigger Device Type
GATE TURN-OFF SCR
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
RMS On-state Current-Max
1200 A
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
DC Gate Trigger Current-Max
3500 mA
DC Gate Trigger Voltage-Max
1.5 V
Peak Reflow Temperature (Cel)
260
Repetitive Peak Reverse Voltage
16 V
Repetitive Peak Off-state Voltage
4500 V
Circuit Commutated Turn-off Time-Nom
32 us
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Repetitive Peak Off-state Leakage Current-Max
100000 uA
Critical Rate of Rise of Off-state Voltage-Min
1000 V/us