Toshiba Corporation SG2000FXF21 | 搜芯易Sourcengine

Toshiba Corporation SG2000FXF21

生命周期状态
Discontinued
说明
Symmetrical GTO SCR, 800A I(T)RMS, 3300V V(DRM), 3300V V(RRM), 1 Element
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SYMMETRICAL GTO SCR

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.30.00.80
SB Code
8541.30.00.80

JESD-30 Code
O-CEDB-N2
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
END
Additional Feature
PEAK TURN-OFF CURRENT IS 2000A
Number of Elements
1
Holding Current-Max
80 mA
Number of Terminals
2
Trigger Device Type
SYMMETRICAL GTO SCR
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
RMS On-state Current-Max
800 A
Operating Temperature-Max
115 Cel
Operating Temperature-Min
-40 Cel
DC Gate Trigger Current-Max
1500 mA
DC Gate Trigger Voltage-Max
1.5 V
Repetitive Peak Reverse Voltage
3300 V
Repetitive Peak Off-state Voltage
3300 V
Circuit Commutated Turn-off Time-Nom
23 us
Repetitive Peak Off-state Leakage Current-Max
150000 uA
Critical Rate of Rise of Off-state Voltage-Min
900 V/us