SCT3120AW7TL
ROHM Semiconductor
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明SICFET N-CH 650V 21A TO263-7
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G7
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals7
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)21
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)650
- Feedback Cap-Max (Crss) (pF)16
- Peak Reflow Temperature (Cel)245
- Operating Temperature-Max (Cel)175
- Pulsed Drain Current-Max (IDM) (A)52
- Drain-source On Resistance-Max (ohm)0.156
- Time@Peak Reflow Temperature-Max (s)30
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SCT3120AW7TL