Cypress Semiconductor Corporation S29GL512T10FHI010 | 搜芯易Sourcengine

Cypress Semiconductor Corporation S29GL512T10FHI010

生命周期状态
Transferred
REACH
REACH compliant
说明
Flash, 32MX16, 100ns, PBGA64
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
3A991.B.1.A
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NOR TYPE
Boot Block
BOTTOM/TOP
Technology
CMOS
Width (mm)
11
Length (mm)
13
JESD-30 Code
R-PBGA-B64
Memory Width
16
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
32MX16
Number of Functions
1
Number of Terminals
64
Terminal Pitch (mm)
1
Access Time-Max (ns)
100
Number of Words Code
32M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Alternate Memory Width
8
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Number of Words (words)
33554432
Programming Voltage (V)
2.7
Supply Current-Max (mA)
60
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30