Cypress Semiconductor Corporation S29GL256P11TFIR20 | 搜芯易Sourcengine

Cypress Semiconductor Corporation S29GL256P11TFIR20

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Flash, 16MX16, 110ns, PDSO56
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NOR TYPE
Boot Block
BOTTOM/TOP
Technology
CMOS
Width (mm)
14
Length (mm)
18.4
JESD-30 Code
R-PDSO-G56
Memory Width
16
Package Code
HTSSOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
16MX16
Number of Functions
1
Number of Terminals
56
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
110
Number of Words Code
16M
Memory Density (bits)
268435456
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
16777216
Programming Voltage (V)
3
Supply Current-Max (mA)
110
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40