Cypress Semiconductor Corporation S29GL01GS12FHIV13 | 搜芯易Sourcengine

Cypress Semiconductor Corporation S29GL01GS12FHIV13

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Flash, 64MX16, 120ns, PBGA64
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
3A991.B.1.A
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NOR TYPE
Ready/Busy
YES
Technology
CMOS
Toggle Bit
YES
Width (mm)
11
Length (mm)
13
Data Polling
YES
JESD-30 Code
R-PBGA-B64
Memory Width
16
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
DLA Qualification
Not Qualified
Page Size (words)
16
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
64MX16
Number of Functions
1
Number of Terminals
64
Sector Size (words)
64K
Terminal Pitch (mm)
1
Access Time-Max (ns)
120
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Command User Interface
YES
Common Flash Interface
YES
Number of Sectors/Size
1K
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Number of Words (words)
67108864
Programming Voltage (V)
2.7
Standby Current-Max (A)
0.0001
Supply Current-Max (mA)
80
Package Equivalence Code
BGA64,8X8,40
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Write Cycle Time-Max (tWC) (ms)
6.0E-5
Time@Peak Reflow Temperature-Max (s)
30