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S26KS512SDABHB033

Cypress Semiconductor Corporation

Cypress Semiconductor Corporation S26KS512SDABHB033
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Technology
    CMOS
  • Width (mm)
    6
  • Length (mm)
    8
  • JESD-30 Code
    R-PBGA-B24
  • Memory Width
    16
  • Package Code
    VBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    FLASH
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    SERIAL
  • Serial Bus Type
    HYPERBUS
  • Write Protection
    HARDWARE
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    32MX16
  • Number of Functions
    1
  • Number of Terminals
    24
  • Terminal Pitch (mm)
    1
  • Number of Words Code
    32M
  • Memory Density (bits)
    536870912
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Data Retention Time-Min
    20
  • Number of Words (words)
    67108864
  • Programming Voltage (V)
    1.8
  • Standby Current-Max (A)
    3.0E-5
  • Supply Current-Max (mA)
    80
  • Package Equivalence Code
    BGA24,5X5,40
  • Clock Frequency-Max (MHz)
    100
  • Endurance (Write/Erase Cycles)
    100000
  • Operating Temperature-Max (Cel)
    105
  • Operating Temperature-Min (Cel)
    -40
  • Screening Level / Reference Standard
    AEC-Q100

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S26KS512SDABHB033
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S26KS512SDABHB033