ROHM Semiconductor S2301 | 搜芯易Sourcengine

ROHM Semiconductor S2301

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
X-XXUC-N
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
UNSPECIFIED
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UNSPECIFIED
Number of Elements
1
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
40
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.111
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED