RMHE41A184AGBG-120#AC0
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 4
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width14 mm
- Length18.5 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B180
- Memory Width18
- Organization64MX18
- Package CodeLBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1181116006 bit
- Memory IC TypeDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles16384
- Terminal Pitch1 mm
- Number of Ports1
- Number of Words67108864 words
- Seated Height-Max1.35 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals180
- Number of Words Code64M
- Package Body MaterialPLASTIC/EPOXY
- Sequential Burst Length4
- Interleaved Burst Length4
- Package Equivalence CodeBGA180,10X18,40
- Supply Voltage-Max (Vsup)1.605 V
- Supply Voltage-Min (Vsup)1.395 V
- Clock Frequency-Max (fCLK)800 MHz
- Moisture Sensitivity Level3
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