Renesas Electronics Corp. RJP65T54DPM-E0#T2 | 搜芯易Sourcengine

Renesas Electronics Corp. RJP65T54DPM-E0#T2

生命周期状态
EOL
REACH
REACH compliant
说明
IGBT TRENCH TO-3FP
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
1.68
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
55.5
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
56
Gate-emitter Voltage-Max (V)
30
Turn-off Time-Nom (toff) (ns)
265
Collector Current-Max (IC) (A)
60
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
650