Renesas Electronics Corp. RJP60F5DPM-00#T1 | 搜芯易Sourcengine

Renesas Electronics Corp. RJP60F5DPM-00#T1

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT for IH
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
5A002
ECCN Governance
EAR

Surface Mount
NO
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
45
Gate-emitter Voltage-Max (V)
30
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
80
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED