Renesas Electronics Corp. RJP60F4DPQ-A0#T0 | 搜芯易Sourcengine

Renesas Electronics Corp. RJP60F4DPQ-A0#T0

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
30 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
235.8 W
Gate-emitter Thr Voltage-Max
8 V
Collector-emitter Voltage-Max
600 V