Renesas Electronics Corp. RJP60F0DPE-00-J3 | 搜芯易Sourcengine

Renesas Electronics Corp. RJP60F0DPE-00-J3

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
YES
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
122
Gate-emitter Voltage-Max (V)
30
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
8
Collector-emitter Voltage-Max (V)
600