Renesas Electronics Corp. RJP60D0DPE-00-J3 | 搜芯易Sourcengine

Renesas Electronics Corp. RJP60D0DPE-00-J3

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
122
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
55
Gate-emitter Voltage-Max (V)
30
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
160
Collector Current-Max (IC) (A)
45
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED