Renesas Electronics Corp. RJP30H1DPP-M0-T2 | 搜芯易Sourcengine

Renesas Electronics Corp. RJP30H1DPP-M0-T2

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 30A I(C), 360V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
30 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
30 A
Power Dissipation-Max (Abs)
20 W
Gate-emitter Thr Voltage-Max
5 V
Collector-emitter Voltage-Max
360 V