Renesas Electronics Corp. RJK60S4DPE-00#J3 | 搜芯易Sourcengine

Renesas Electronics Corp. RJK60S4DPE-00#J3

生命周期状态
EOL
RoHS
符合RoHS标准
说明
N Channel Power MOSFET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
5A002
ECCN Governance
EAR

Configuration
SINGLE
Surface Mount
YES
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
16 A
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
104.1 W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED