Renesas Electronics Corp. RJK0210DPA-00-J53 | 搜芯易Sourcengine

Renesas Electronics Corp. RJK0210DPA-00-J53

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 40A I(D), 25V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-N5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
NICKEL PALLADIUM GOLD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
40
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Pulsed Drain Current-Max (IDM) (A)
160
Drain-source On Resistance-Max (ohm)
0.0074